The importance of 5G for Infineon

Datum: 05.04.2017 | Views: 11 | Länge: 1:14
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 The importance of 5G for Infineon by Philipp Schierstädt

Demonstration at Mobile World Congress 2017 in Barcelona


Best-in-class performance with Infineon® GPS/GNSS front-end devices
Länge: 4:00
Datum: 09.02.2012 | Views: 55197

Best-in-class performance with Infineon® GPS/GNSS front-end devices

Infineon is the leading semiconductor company providing GPS and GNSS front-end devices. Infineon products cover all GNSS standards. They improve system sensitivity and suppress out-of-band cellular as well as wireless signals thus providing faster time-to-first-fix and lesser tracking errors. With their low-noise figure, excellent interferer rejection and worldwide smallest size, Infineon has defined the benchmark in navigation industry. Almost all Smartphone and PND makers prefer Infineon devices as first choice.
Infineon is the leading semiconductor company providing GPS and GNSS front-end devices. Infineon products cover all GNSS standards. They improve system sensitivity and suppress out-of-band cellular as well as wireless signals thus providing faster time-to-first-fix and lesser tracking errors. With their low-noise figure, excellent interferer rejection and worldwide smallest size, Infineon has defined the benchmark in navigation industry. Almost all Smartphone and PND makers prefer Infineon devices as first choice.
Infineon’s LNA   improves FM radio reception in mobile devices
Länge: 4:06
Datum: 11.06.2012 | Views: 42668

Infineon’s LNA improves FM radio reception in mobile devices

This Video describes how the Infineon Low Noise Amplifiers enhance the system performance of FM reception in mobile devices. With the latest FM LNA BGB719N7ESD it is possible to significantly improve the reception of FM in mobile phones in combination with an embedded antenna. The BGB719N7 LNA is housed in a very tiny package and requires only 3 external capacitors for operation. With its high input impedance it is possible to match the LNA very easy to small embedded antennas. The high gain and the ultra low noise figure of the BGB719N7ESD increase the sensitivity and the system performance.

This Video describes how the Infineon Low Noise Amplifiers enhance the system performance of FM reception in mobile devices. With the latest FM LNA BGB719N7ESD it is possible to improve the reception of mobile phones with embedded antennas significantly. The BGB719N7 has a very small package TSNP-7-6 (size 1.26x1.4x0.37 mm) and needs for operation only 3 external capacitors. It fits especially for small embedded antennas through its high input impedance. The system sensitivity and the FM performance are highly enriched by BGB719N7ESD through its high gain and ultra low noise figure.


This Video describes how the Infineon Low Noise Amplifiers enhance the system performance of FM reception in mobile devices. With the latest FM LNA BGB719N7ESD it is possible to significantly improve the reception of FM in mobile phones in combination with an embedded antenna. The BGB719N7 LNA is housed in a very tiny package and requires only 3 external capacitors for operation. With its high input impedance it is possible to match the LNA very easy to small embedded antennas. The high gain and the ultra low noise figure of the BGB719N7ESD increase the sensitivity and the system performance.

This Video describes how the Infineon Low Noise Amplifiers enhance the system performance of FM reception in mobile devices. With the latest FM LNA BGB719N7ESD it is possible to improve the reception of mobile phones with embedded antennas significantly. The BGB719N7 has a very small package TSNP-7-6 (size 1.26x1.4x0.37 mm) and needs for operation only 3 external capacitors. It fits especially for small embedded antennas through its high input impedance. The system sensitivity and the FM performance are highly enriched by BGB719N7ESD through its high gain and ultra low noise figure.


Best-in-Class Low Noise Amplifiers for 5 – 6 GHz WLAN Applications
Länge: 3:47
Datum: 11.06.2012 | Views: 6821

Best-in-Class Low Noise Amplifiers for 5 – 6 GHz WLAN Applications

The BFx840xESD product family is Infineon’s latest RF transistors specially designed for 5-6 GHz WLAN high band LNA application. This family combines the 80 GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process with special device geometry engineering to reduce the parasitic capacitance between substrate and transistor that degrades high-frequency characteristics. It supports supply voltage down to 1.5V, and offers outstanding device performance of 22.5 dB Maximum Gain and 0.75 dB Minimum Noise Figure at 5.5 GHz (typical values).


For YouTube™:

The BFx840xESD product family is Infineon’s latest RF transistors specially designed for 5-6 GHz WLAN high band LNA application. BFx840x transistors combine the 80 GHz fT SiGe:C process with special device geometry engineering to reduce the parasitic capacitance that degrades transistor’s high-frequency characteristics. In this video it is used to build up a 5-6 GHz frontend circuit featuring 0.96 dB Noise Figure, 15.1 dB Gain, +2dBm input IP3 and 8 external passive components only. Such frontend system allows the RF designers to increase the RF link budget and Signal-to-Noise-Ratio between the WLAN routers and the Clients.


The BFx840xESD product family is Infineon’s latest RF transistors specially designed for 5-6 GHz WLAN high band LNA application. This family combines the 80 GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process with special device geometry engineering to reduce the parasitic capacitance between substrate and transistor that degrades high-frequency characteristics. It supports supply voltage down to 1.5V, and offers outstanding device performance of 22.5 dB Maximum Gain and 0.75 dB Minimum Noise Figure at 5.5 GHz (typical values).


For YouTube™:

The BFx840xESD product family is Infineon’s latest RF transistors specially designed for 5-6 GHz WLAN high band LNA application. BFx840x transistors combine the 80 GHz fT SiGe:C process with special device geometry engineering to reduce the parasitic capacitance that degrades transistor’s high-frequency characteristics. In this video it is used to build up a 5-6 GHz frontend circuit featuring 0.96 dB Noise Figure, 15.1 dB Gain, +2dBm input IP3 and 8 external passive components only. Such frontend system allows the RF designers to increase the RF link budget and Signal-to-Noise-Ratio between the WLAN routers and the Clients.


Google ATAP and Infineon - Gesture control is revolutionizing usability of devices
Länge: 3:00
Datum: 30.05.2016 | Views: 3095

Google ATAP and Infineon - Gesture control is revolutionizing usability of devices

Infineon Technologies AG announced that it is working with Google’s Advanced Technology and Projects group (ATAP) to develop a sensing solution which is shown in the Google I/O 2016‬ event.

www.infineon.com

Infineon Technologies AG announced that it is working with Google’s Advanced Technology and Projects group (ATAP) to develop a sensing solution which is shown in the Google I/O 2016‬ event.

www.infineon.com

RF Discretes - Robust, Flexible, Small and Reliable Devices for Complementary Wireless Solutions
Länge: 3:56
Datum: 17.05.2016 | Views: 2447

RF Discretes - Robust, Flexible, Small and Reliable Devices for Complementary Wireless Solutions

For over a decade Infineon Technologies has paved the way in all radio frequency segments with RF Discretes fulfilling with fundamental application requirements.

More information
www.infineon.com/rftransistors
www.infineon.com/rfdiodes
For over a decade Infineon Technologies has paved the way in all radio frequency segments with RF Discretes fulfilling with fundamental application requirements.

More information
www.infineon.com/rftransistors
www.infineon.com/rfdiodes