CoolSiC™ Schottky diode 650 V G6 - For unparalleled efficiency and price performance

Datum: 26.09.2017 | Views: 102 | Länge: 4:26
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The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650 V G6 offers the best efficiency per dollar.

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Automotive Power MOSFETs
Länge: 6:01
Datum: 15.12.2011 | Views: 1051556

Automotive Power MOSFETs

Based on the combination of innovative packaging technology and Infineon’s thin wafer process technology, the new 40V OptiMOS™ T2 power MOSFETs offer best-in- class specifications. Infineon uses a diffusion soldering die attach approach to produce dedicated products in TO263, TO220 and TO262. Four OptiMOS™ T2 products in these packages are ready for production: the IPB160N04S4-02D (with 160A in a TO263 package), the IPB100N04S4-02D (with 100A in TO263) and the IPP/I100N04S4-03D (with 100A in TO220 and TO262). With those products, Infineon exceeds current RoHS (Restriction on Hazardous Substances) directives related to lead-based solder used to attach silicon chips to packages. Stricter ELV RoHS directives pending implementation after 2014 may require 100% lead-free packaging. The new Infineon devices allow customers to meet these stricter requirements.


Based on the combination of innovative packaging technology and Infineon’s thin wafer process technology, the new 40V OptiMOS™ T2 power MOSFETs offer best-in- class specifications. Infineon uses a diffusion soldering die attach approach to produce dedicated products in TO263, TO220 and TO262. Four OptiMOS™ T2 products in these packages are ready for production: the IPB160N04S4-02D (with 160A in a TO263 package), the IPB100N04S4-02D (with 100A in TO263) and the IPP/I100N04S4-03D (with 100A in TO220 and TO262). With those products, Infineon exceeds current RoHS (Restriction on Hazardous Substances) directives related to lead-based solder used to attach silicon chips to packages. Stricter ELV RoHS directives pending implementation after 2014 may require 100% lead-free packaging. The new Infineon devices allow customers to meet these stricter requirements.


Infineon’s New 4.5kV IHV IGBT
Länge: 4:19
Datum: 13.10.2011 | Views: 14282

Infineon’s New 4.5kV IHV IGBT

The new 4.5kV IGBT modules are optimized for use in traction drives and high-voltage DC transmission systems.

Thanks to the elevated current density of these devices which incorporate the latest IGBT3/EC3 chips, more power can be transmitted and higher output can be achieved without altering the existing inverter design or needing a more powerful cooling.
The new 4.5kV IGBT modules are optimized for use in traction drives and high-voltage DC transmission systems.

Thanks to the elevated current density of these devices which incorporate the latest IGBT3/EC3 chips, more power can be transmitted and higher output can be achieved without altering the existing inverter design or needing a more powerful cooling.
7 Buttons Application Kit
Länge: 6:33
Datum: 13.10.2011 | Views: 3714

7 Buttons Application Kit

In this video the 7 buttons kit is presented showing Infineon´s XC822T touch performance. Flexibility is demonstrated through a change of parameters using the whole tool chain – Dave, DaveBench, Fload,U-SPY.
In this video the 7 buttons kit is presented showing Infineon´s XC822T touch performance. Flexibility is demonstrated through a change of parameters using the whole tool chain – Dave, DaveBench, Fload,U-SPY.
You CanPAK™ more performance in your application with Infineon
Länge: 3:48
Datum: 13.10.2011 | Views: 58424

You CanPAK™ more performance in your application with Infineon

Low voltage power MOSFETs, OptiMOS™ 60V to 150V, in high performance double sided cooling package, CanPAK™
Low voltage power MOSFETs, OptiMOS™ 60V to 150V, in high performance double sided cooling package, CanPAK™
New market leading 650V CoolMOS™ technology with integrated fast body diode
Länge: 3:00
Datum: 13.10.2011 | Views: 31473

New market leading 650V CoolMOS™ technology with integrated fast body diode

With the new 650V CoolMOS™ CFD2 Infineon launches its second generation of its market leading high voltage CoolMOS™ MOSFET´s with integrated fast body diode. The new CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
With the new 650V CoolMOS™ CFD2 Infineon launches its second generation of its market leading high voltage CoolMOS™ MOSFET´s with integrated fast body diode. The new CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.